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VG4632321AQ-7 参数 Datasheet PDF下载

VG4632321AQ-7图片预览
型号: VG4632321AQ-7
PDF下载: 下载PDF文件 查看货源
内容描述: 524,288x32x2位CMOS同步图形RAM [524,288x32x2-Bit CMOS Synchronous Graphic RAM]
分类和应用:
文件页数/大小: 81 页 / 1954 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
 浏览型号VG4632321AQ-7的Datasheet PDF文件第4页浏览型号VG4632321AQ-7的Datasheet PDF文件第5页浏览型号VG4632321AQ-7的Datasheet PDF文件第6页浏览型号VG4632321AQ-7的Datasheet PDF文件第7页浏览型号VG4632321AQ-7的Datasheet PDF文件第9页浏览型号VG4632321AQ-7的Datasheet PDF文件第10页浏览型号VG4632321AQ-7的Datasheet PDF文件第11页浏览型号VG4632321AQ-7的Datasheet PDF文件第12页  
Preliminary  
VG4632321A  
524,288x32x2-Bit  
CMOS Synchronous Graphic RAM  
VIS  
T6  
T2  
T7  
T8  
T1  
T3  
T4  
T5  
T0  
CLK  
DQM  
NOP  
READ A  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
DQ’s  
WRITE B  
NOP  
DINB  
DINB  
DINB  
DOUT A  
0
2
1
0
Must be Hi-Z before  
the Write Command  
: “H” or “L”  
Read to Write interval (Burst Length °Ÿ 4, CAS Latency = 3)  
T6  
T2  
T7  
T1  
T3  
T8  
T4  
T5  
T0  
1 Clk Interval  
CLK  
DQM  
BANK A  
ACTIVATE  
NOP  
COMMAND  
WRITE A  
NOP  
NOP  
READ A  
NOP  
NOP  
NOP  
CAS Iatency = 1  
t
,DQ’s  
DIN A  
DIN A  
DIN A  
DIN A  
CK1  
DIN A  
0
1
2
3
Must be Hi-Z before  
the Write Command  
CAS Iatency = 2  
DIN A  
DIN A  
DIN A  
0
1
3
2
t
,DQ’s  
CK2  
: “H” or “L”  
Read to Write interval (Burst Length °Ÿ 4, CAS Latency = 1, 2)  
T6  
T2  
T7  
T1  
T3  
T8  
T4  
T5  
T0  
CLK  
DQM  
NOP  
COMMAND  
NOP  
WRITE B  
NOP  
NOP  
READ A  
NOP  
NOP  
NOP  
CAS Iatency = 1  
tCK1,DQ’s  
DOUT A0  
DIN B1  
DIN B1  
DIN B3  
DIN B3  
DINB2  
DIN B0  
DIN B0  
Must be Hi-Z before  
the Write Command  
CAS Iatency = 2  
tCK2,DQ’s  
DIN B2  
: “H” or “L”  
Read to Write interval (Burst Length °Ÿ 4, CAS Latency = 1, 2)  
A read burst without auto precharge function may be interrupted by a BankPrecharge/  
PrechargeAll command to the same bank. The following figure shows the optimum time that  
BankPrecharge/PrechargeAll command is issued in different CAS latency.  
Document:  
Rev.1  
Page8  
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