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VG4616321BQ-6R 参数 Datasheet PDF下载

VG4616321BQ-6R图片预览
型号: VG4616321BQ-6R
PDF下载: 下载PDF文件 查看货源
内容描述: 262,144x32x2位CMOS同步图形RAM [262,144x32x2-Bit CMOS Synchronous Graphic RAM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 82 页 / 1377 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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VG4616321B/VG4616322B  
262,144x32x2-Bit  
Preliminary  
CMOS Synchronous Graphic RAM  
VIS  
DQM0  
DSF  
Q
D
DRAM  
CELL  
CK  
BankActivate  
command  
DQ7  
DQ6  
MR7  
MR6  
DQ5  
DQ4  
MR5  
MR4  
DQ3  
MR3  
MR2  
DQ2  
DQ1  
MR1  
MR0  
DQ0  
0 = Masked  
1 = Not Masked  
Note: Only lower byte is shown. The operation is identical for other bytes.  
Write Per Bit (I/O Mask) Block Diagram  
A write burst without auto precharge function may be interrupted by a subsequent Write/Block  
Write, BankPrecharge/PrechargeAll, or Read command before the end of burst length. The interrupt  
comes from Write/Block Write command can occur on any clock cycle following the previous Write  
command ( refer to the following figure).  
T6  
T2  
T7  
T8  
T1  
T3  
T4  
T5  
T0  
CLK  
NOP  
NOP  
NOP  
NOP  
WRITE A  
DIN A0  
NOP  
COMMAND  
WRITE B  
NOP  
NOP  
1 Clk Interval  
DQ’s  
DIN B2  
DIN B3  
DIN B0  
DIN B1  
Write Interrupted by a Write (Burst Length = 4, CAS Latency = 1, 2, 3)  
The Read command that interrupts a write burst without auto precharge function should  
be issued one cycle after the clock edge at which the last data-in element is registered. In  
order to avoid data contention, input data must be removed from the DQs at least one clock  
cycle before the first read data appears on the outputs (refer to the following figure). Once the  
Read command is registered, the data inputs will be ignored, and writes will not be executed.  
Document:1G5-0145  
Rev.1  
Page11  
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