VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
VIS
AC Parameters for Read Timing (1 of 2)
Burst Length=2, CAS Latency=2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11 T12 T13
CLK
CKE
CS
t
t
t
CH CL
CK2
t
Begin Auto
Precharge
Bank B
t
CMS
CKH
t
CMH
t
CKS
RAS
CAS
WE
*BS0
A10
t
AH
t
AS
ADD
t
RRD
t
RAS
t
RC
DQM
DQ
t
t
t
t
AC2
AC2
HZ
RP
t
t
t
RCD
t
t
OH
LZ
OH
HZ
Hi-Z
QBa0
QAa0
QBa1
QAa1
Activate
Command
Bank A
Read with
Auto Precharge
Command
Bank B
Activate
Command
Bank B
Precharge
Command
Bank A
Activate
Command
Bank A
Read
Command
Bank A
* BS1=”L”, Bank C,D = Idle
Document :1G5-0177
Rev.2
Page32
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
