Preliminary
VG36641641BT
CMOS Synchronous Dynamic RAM
VIS
(2/3)
Current state
CS RAS CA WE
Address
Command
Action
Notes
Read with auto
precharge
H
L
L
L
L
L
L
L
L
H
X
H
H
H
H
L
X
H
H
L
X
H
L
X
X
X
DESL
NOP
BST
Continue burst to end ® Precharging
Continue burst to end ® Precharging
ILLEGAL
H
L
BA, CA, A10 READ/READA ILLEGAL
BA, CA, A10 WRIT/WRITA ILLEGAL
11
11
L
H
H
L
H
L
BA, RA
BA, A10
X
ACT
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
3,11
3,11
L
PRE/PALL
PEF/SELF
MRS
L
H
L
L
L
Op - Code
X
Write with auto
precharge
X
X
X
DESL
Continue burst to end ® write
recovering with auto precharte
L
H
H
H
X
X
NOP
BST
Continue burst to end ® write
recovering with auto precharge
L
L
L
L
L
L
L
H
H
H
H
L
H
L
L
H
L
ILLEGAL
BA, CA, A10 READ/READA ILLEGAL
BA, CA, A10 WRIT/WRITA ILLEGAL
11
11
L
H
H
L
H
L
BA, RA
BA, A10
X
ACT
ILLEGAL
3,11
3,11
L
PRE/PALL
REF/SELF
MRS
ILLEGAL
L
H
L
ILLEGAL
L
L
Op - code
X
ILLEGAL
Precharging
X
X
X
DESL
Nop ® Enter idle after tRP
L
L
H
H
H
H
H
L
X
X
NOP
BST
Nop ® Enter idle after tRP
Nop ® Enter idle after tRP
L
L
L
L
H
H
L
L
L
H
L
BA, CA, A10 READ/READA ILLEGAL
BA, CA, A10 WRIT/WRITA ILLEGAL
3
3
3
H
H
H
L
BA, RA
ACT
ILLEGAL
L
BA, A10
PRE/PALL
Nop ® Enter idle after tRP
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
H
L
X
REF/SELF
MRS
ILLEGAL
Op - Code
ILLEGAL
Row activating
X
H
H
H
H
L
X
H
H
L
X
H
L
X
X
X
DESL
NOP
Nop ® Enter row active after tRCD
Nop ® Enter row active after tRCD
Nop ® Enter row active after tRCD
BST
H
L
BA, CA, A10 READ/READA ILLEGAL
3
3
L
BA, CA, A10 WRIT/WRITA ILLEGAL
H
H
L
H
L
BA, RA
BA, A10
X
ACT
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
3,9
3
L
PRE/PALL
REF/SELF
MRS
L
H
L
L
L
Op - Code
Document : 1G5-0127
Rev2
Page11
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
