VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
VIS
Burst Read and Single Write Operation
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
High
CKE
CS
RAS
CAS
WE
*BS0
RAa
A10
CAa
RAa
CAd
CAc
CAe
CAb
ADD
DQM
Hi-Z
DQ
DQs are
Command masked
Bank A
Read
Single Write
Command
Bank A
Read
Activate
Command
Bank A
Single Write
Command
Bank A
Single Write
Command
Bank A
DQs are
masked
Command
Bank A
* BS1=”L”, Bank C,D = Idle
Document :1G5-0177
Rev.2
Page64