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VG366440(80/16)41DT(L)-8H 参数 Datasheet PDF下载

VG366440(80/16)41DT(L)-8H图片预览
型号: VG366440(80/16)41DT(L)-8H
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS同步动态RAM [CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 69 页 / 1363 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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VG36644041DT / VG36648041DT / VG36641641DT  
CMOS Synchronous Dynamic RAM  
VIS  
10.BURST Termination  
There are two methods to terminate a burst operation other than using a read or a write command. One is the burst  
stop command and the other is the precharge command.  
10.1 BURST Stop Command  
During a read burst, when the burst stop command is issued, the burst read data are terminated and the data bus  
goes to high-impedance after the CAS latency from the burst stop command.  
During a write burst, when the burst stop command is issued, the burst write data are termained and data bus goes to  
Hi-Z at the same clock with the burst stop command.  
Burst Termination  
Burst lengh=X, CAS Intency=2,3  
T7  
T0  
T1  
T3  
T6  
T2  
T4  
T5  
CLK  
BST  
Read  
Command  
Hi-Z  
CAS latency=2  
Q0  
Q1  
Q0  
Q2  
Q1  
DQ  
Hi-Z  
CAS latency=3  
Q2  
DQ  
Remark BST: Burst stop command  
Burst lengh=X, CAS latency=2,3  
T7  
T0  
T1  
T3  
T6  
T2  
T4  
T5  
CLK  
BST  
Write  
Q0  
Command  
CAS latency=2,3  
Hi-Z_  
Q0  
Q1  
Q2  
DQ  
Remark BST: Burst command  
Document :1G5-0177  
Rev.2  
Page25  
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