VIS
Absolute Maximum Ratings
(1)
VG3617161ET
1,048,576 x 16 - Bit
CMOS Synchronous Dynamic RAM
Parameter
Voltage on any pin relative to Vss
Supply voltage relative to Vss
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Symbol
V
IN
,V
OUT
V
DD
,V
DDQ
I
OUT
P
D
T
OPT
T
STG
Value
-1.0 to +4.6
-1.0 to +4.6
50
1.0
0 to + 70
-55 to + 125
Unit
V
V
mA
W
°C
°C
Recommended DC Operating Conditions
(T
A
=0~70
°C)
Parameter
Supply Voltage
Input High Voltage, all inputs
Input Low Voltage, all inputs
Symbol
V
DD
V
IH
V
IL
Min
3.0
2.0
-0.3
Typ
3.3
–
–
Max
3.6
V
DD
+0.3
0.8
Unit
V
V
V
Note
I
II
Note I.Overshoot limit : V
IH(MAX.)
=V
DDQ
+2.0V with a pulse width < 3ns
II .Undershoot limit : V
IL
=V
SSQ
-2.0V with a pulse width< 3ns and -1.5V with a pulse width< 5ns
DC Electrical Characteristics
Parameter
I
IL
I
OL
Description
Input Leakage Current
( 0V
≤
VIN
≤
V DD All other pins not under test = 0V)
Output Leakage Current
≤
V
Output disable, ( 0V
≤
V
)
OUT
DDQ
LVTTL Output ”H” Level Voltage(l
OUT
= -2mA)
LVTTL Output ”L” Level Voltage(l
OUT
= 2mA)
Min.
-5
Max.
5
Unit
µ
A
µ
A
Note
-5
5
V
OH
V
OL
2.4
-
-
0.4
V
V
Capacitance
(T
A
=25°C,f=1MHZ)
Parameter
Input capacitance(CLK)
Input capacitance(all input pins except data
pins)
Data input/output capacitance
Symbol
C
11
C
12
C
I/O
Typ
2.5
2.5
4.0
Max
4
5
6.5
Unit
pF
pF
pF
Document:1G5-0189
Rev.1
Page 4
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
