欢迎访问ic37.com |
会员登录 免费注册
发布采购

VG3617161ET-6 参数 Datasheet PDF下载

VG3617161ET-6图片预览
型号: VG3617161ET-6
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS同步动态RAM [CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 69 页 / 1125 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
 浏览型号VG3617161ET-6的Datasheet PDF文件第3页浏览型号VG3617161ET-6的Datasheet PDF文件第4页浏览型号VG3617161ET-6的Datasheet PDF文件第5页浏览型号VG3617161ET-6的Datasheet PDF文件第6页浏览型号VG3617161ET-6的Datasheet PDF文件第8页浏览型号VG3617161ET-6的Datasheet PDF文件第9页浏览型号VG3617161ET-6的Datasheet PDF文件第10页浏览型号VG3617161ET-6的Datasheet PDF文件第11页  
VIS
6. Power-up sequence is described in Note 10.
7. A.C. Test Conditions
Reference Level of Output Signals
Output Load
Input Signal Levels
Transition Time (Rise and Fall) of Input Signals
Reference Level of Input Signals
VG3617161ET
1,048,576 x 16 - Bit
CMOS Synchronous Dynamic RAM
1.4V
Reference to the Under Output Load (B)
2.4V / 0.4V
1ns
1.4V
3.3V
1.2K
Output
Output
1.4V
50
ZO=50
30pF
30pF
870
LVTTL D.C. Test Load (A)
LVTTL A.C. Test Load (B)
8. Transition times are measured between V
IH
and V
IL
. Transition (rise and fall) of input signals are fixed slope (1 ns).
9. t
HZ
defines the time at which the outputs achieve the open circuit condition and are not reference levels.
10. Power up sequence
Power up must be performed in the following sequence.
1) Power must be applied to V
DD
and V
DDQ
(simultaneously) when all input signals are held “NOP” state and
CKE = ”H”, DQM = ”H”. The CLK signals must be started at the same time.
2) After power-up, a pause of 200u secouds minimum is required. Then, it is recommended that DQM is held
“high” (V
DD
levels) to ensure DQ output to be in the high impedance.
3) Both banks must be precharged.
4) Mode Register Set command must be asserted to initialize the Mode Register.
5) A minimum of 8 Auto-Refresh dummy cycles must be required to stabilize the internal circuitry of the device. Sequence of
4 and 5 may be changed.
Document:1G5-0189
Rev.1
Page 7