VIS
Absolute Maximum D.C. Ratings
Parameter
Voltage on any pin relative to Vss
Supply voltage relative to Vss
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Preliminary
VG36128401A
VG36128801A
VG36128161A
CMOS Synchronous Dynamic RAM
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
I
OUT
P
D
T
OPT
T
STG
Value
-0.5 to + 4.6
-0.5 to + 4.6
50
1.0
0 to + 70
-55 to + 125
Unit
V
V
mA
W
J
¢
J
¢
Caution:
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent
damage. The device is not meant to be operated under conditions outside the limits described in the
operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended
periods may affect device reliability.
Maximum A.C. Operating Requirements for LVTTL Compatible
Parameter
Symbol
Min
Input High Voltage
V
IH
2.0
Input Low Voltage
V
IL
-0.3
Max
V
DD
+ 0.3
0.8
Unit
V
V
Notes
1
2
Note: 1. Overshoot limit: V
IH
(max)=V
DDQ
+2.0V with a pulse with
<
3ns
2. Undershoot limit: V
IL
(min)=V
SSQ
-2.0V with a pulse with
<
3ns
and -1.5v with a pulse
<
5ns
Recommended DC Operating Conditions for LVTTL Compatible
Parameter
Symbol
Min
Supply Voltage
V
DD,
V
DDQ
3.0
Input High Voltage, all inputs
Input Low Voltage, all inputs
V
IH
V
IL
2.0
-0.3
Typ
3.3
Ð
¡
Ð
¡
Max
3.6
V
DD
+ 0.3
0.8
Unit
V
V
V
Capacitance
(Ta=25°C, f = 1MHZ)
Parameter
Input capacitance (CLK)
Input capacitance (all input pins except data
pins.)
Data input/output capacitance
Symbol
C
11
C
12
C
I/O
Min
2.5
2.5
4.0
Max
4
5
6.5
Unit
pF
pF
pF
Notes
1
1
1
Notes :
1. Capacitance measured with effective capacitance measuring method.
Document : 1G5-0154
Rev.1
Page 4
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
