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FDZ375P

P 沟道,1.5V 指定,PowerTrench® 薄款 WL-CSP MOSFET,-20V,-3.7A,78mΩ
开关晶体管
1 ONSEMI

GQM2195C2E1R0CB12#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GRM0335C1H2R6CA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
1 MURATA

GRM0335C2A5R7CA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GQM2195C2E1R7CB12#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

FDMD8630

双 N 沟道,PowerTrench® MOSFET,30 V, 167 A,1.0 mΩ
暂无信息
1 ONSEMI

PSMN1R7-40YLD

N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technologyProduction
暂无信息
0 NEXPERIA

PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technologyProduction
开关脉冲晶体管
0 NEXPERIA

TLE4999I3

The XENSIV™ TLE4999I3 provides all means that are necessary to fulfill the state-of-the-art functional safety requirements on system level. It is developed in full compliance with ISO 26262. The device provides high redundancy on one chip by means of two sensor elements included within one monolithic silicon design. The two diverse Hall sensor elements („main” and „sub”) have internally separated signal paths within the chip. A plausibility check secures the high diagnostic coverage required for premium functional safety compliant systems up to ASIL-D.
暂无信息
0 INFINEON

GRM1882C1H7R3WA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GRM0115C1E5R6CE01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GCM1885C2A750JA16#

汽车[动力总成 / 安全设备],汽车[信息娱乐 / 舒适设备],植入式以外的医疗器械设备 [GHTF A/B/C]
医疗医疗器械
0 MURATA

GRM21BR11H823MA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

FGH4L50T65SQD

IGBT - 650 V 50 A FS4 high speed IGBT with copack diode
双极性晶体管
0 ONSEMI

GRM0115C1E8R4BE01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA