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PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technologyProduction
开关脉冲晶体管
0 NEXPERIA

NCV7684DQR2G

LED 线性电流驱动器,12 沟道,60 mA, 可控制 I2C
驱动驱动器
0 ONSEMI

GCM1885G1H3R9CA16#

汽车[动力总成 / 安全设备],汽车[信息娱乐 / 舒适设备],植入式以外的医疗器械设备 [GHTF A/B/C]
医疗医疗器械
0 MURATA

GRM1882C2A9R7CA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
1 MURATA

GRM1552C1E9R4BA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GRM2195C1H133JA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAKProduction
暂无信息
0 NEXPERIA

GMA085R71H331MA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

IPT019N08N5

Infineon’s OptiMOS™ 5 80V n-channel power MOSFET IPT019N08N5 in TO-Leadless package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. With a 60% space reduction compared to D2PAK 7pin package, TO-Leadless (TOLL) is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.
暂无信息
0 INFINEON

PMEG10020ELR

100 V, 2 A low leakage current Schottky barrier rectifierProduction
功效光电二极管
0 NEXPERIA

ECH8659-TL-W

双 N 沟道功率 MOSFET 30V,7A,24mΩ
开关脉冲晶体管
0 ONSEMI

GCM1555C1H431JA16#

汽车[动力总成 / 安全设备],汽车[信息娱乐 / 舒适设备],植入式以外的医疗器械设备 [GHTF A/B/C]
医疗医疗器械
0 MURATA

GCM1885C1H620FA16#

汽车[动力总成 / 安全设备],汽车[信息娱乐 / 舒适设备],植入式以外的医疗器械设备 [GHTF A/B/C]
医疗医疗器械
0 MURATA

GQM2195C2E1R8DB12#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA
暂无信息
0 MURATA