Page 4
2354µm (0.0927")
IB
Pad 34
IB
Pad 35
GND
Pad 36
GND
Pad 37
GND
Pad 38
GND
Pad 39
GND
Pad 40
GND
Pad 41
VSS
Pad 42
VSS
Pad 43
VSS
Pad 44
VSS
Pad 45
GND
Pad 46
GND
Pad 47
GND
Pad 48
GND
Pad 1
NDIN
Pad 2
GND
Pad 3
SDH/SONET 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
Bare Die Descriptions
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52321-0, Rev 2.3
02/26/01
GND
Pad 33
DOUT
Pad 32
GND
Pad 31
GND
Pad 30
50µm
VITESSE
SEMICONDUCTOR CORPORATION
(0.002")
Figure 1: Pad Assignments
GND
Pad 4
GND
Pad 5
GND
Pad 6
GND
Pad 7
DIN
Pad 8
GND
Pad 9
IBN
Pad 23
IP
Pad 22
IP
Pad 21
GND
Pad 20
GND
Pad 19
VIP
Pad 18
VSS
Pad 17
VSS
Pad 16
VSS
Pad 15
VSS
Pad 14
DCC
Pad 13
GND
Pad 12
GND
Pad 11
NC
Pad 10
1754µm
(0.0691")
GND
Pad 29
GND
Pad 28
GND
Pad 27
NDOUT
Pad 26
GND
Pad 25
IBN
Pad 24
VSC7991
Advance Product Information
NOTE: All dimensions are in micrometers. The 48 pads specified in the pad coordinates were merged into 24 larger pads.
Die Size: 2354µm x 1754µm (0.0927" x 0.0691")
Die Thickness: 381µm (0.015")
Pad Pitch: 150µm (0.0059")
Pad Size: 116µm x 116µm (0.0046" x 0.0046")
Pad Passivation Opening: 100µm x 100µm (0.0039" x 0.0039")
Scribe Size: 50µm (0.002")
50µm
(0.002")
VSC7991
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
