6/28/02
G52356, Rev 4.1
B
ARE
D
IE AND
P
ACKAGE
I
NFORMATION
2354µm (0.0927")
IB
Pad 34
GND
Pad 33
DOUT
Pad 32
GND
Pad 31
GND
Pad 30
GND
Pad 29
GND
Pad 28
GND
Pad 27
NDOUT
Pad 26
GND
Pad 25
IBN
Pad 24
IB
Pad 35
GND
Pad 36
GND
Pad 37
GND
Pad 38
GND
Pad 39
GND
Pad 40
GND
Pad 41
VSS
Pad 42
VSS
Pad 43
VSS
Pad 44
VSS
Pad 45
GND
Pad 46
GND
Pad 47
GND
Pad 48
GND
Pad 1
NDIN
Pad 2
GND
Pad 3
GND
Pad 4
50µm
(0.002")
Figure 3. Pad Diagram for Bare Die (-W)
1754µm
(0.0691")
VSC7989
Top View
GND
Pad 5
GND
Pad 6
GND
Pad 7
DIN
Pad 8
GND
Pad 9
5 of 10
IBN
Pad 23
IP
Pad 22
IP
Pad 21
GND
Pad 20
GND
Pad 19
VIP
Pad 18
VSS
Pad 17
VSS
Pad 16
VSS
Pad 15
VSS
Pad 14
DCC
Pad 13
GND
Pad 12
GND
NC
Pad 11 Pad 10
NOTE: All dimensions are in micrometers. The 48 pads specified in the pad coordinates were merged into 24 larger pads.
The die backside must be connected to the most negative supply or be left floating.
Die Size: 2354µm x 1754µm (0.0927" x 0.0691")
Die Thickness: 381µm (0.015")
Pad Pitch: 150µm (0.0059")
Pad Size: 116µm x 116µm (0.0046" x 0.0046")
Pad Passivation Opening: 100µm x 100µm (0.0039" x 0.0039")
Scribe: 50µm (0.002")
50µm
(0.002")
VSC7989
Data Sheet
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
