VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7969
Symbol
MON
DC
IMON
RANGE
R
J
D
J
3.125Gb/s Integrated Transimpedance
and Limiting Amplifier with Signal Detect
Min
Typ
0.8
-5
5
0
TBD
TBD
+5
200
10
Parameter
Slope of Linear Analog Photocurrent
Monitor vs Input Optical Power
Duty Cycle
Photocurrent Monitor Linearity Range
Random Jitter
(2)
Deterministic Jitter
(3)
Max
Units
µA/µW
%
µA
µA
ps
ps
Conditions
0Ω to 2kΩ to V
CC
with a detector
responsitivity of 0.8A/W
IMON
OFFSET
Photocurrent Monitor Offset
Peak-to-peak
Peak-to-peak
NOTES: (1) The transimpedance gain is defined as Z
T
= (∆V
OUT - DIFF
)/∆I
PH
. (2) Using 1111100000 pattern at 2.5Gb/s to measure the
standard deviation of the edge of the pattern, multiply the standard deviation by 14 to achieve the total random jitter. (3) +K28.5
- K28.5 (00111110101100000101).
Table 2: DC Specifications
Symbol
GND
V
CCS
V
CCD
ICC
V
OUT-CM
V
ANODE
V
CATHODE
V
CAT-EXT
V
APD
Parameter
Negative Supply Rail
Positive Supply Rail for 3.3V Operation
Positive Supply Rail for 5V Operation
Power Supply Current
Common-Mode Voltage on Output Pins
Internal DC Bias Voltage on Detector
Anode Contact
Interal DC Bias Voltage on Detector
Cathode Contact
External DC Bias Voltage Permissable
on Detector Cathode Contact
External DC Bias Voltage for Use with
Avalanche Photodetector
Min
3.0
4.5
Typ
0
3.3
5.0
65
V
CCS
-
125mV
Max
3.6
5.5
75
Units
V
V
V
mA
Conditions
3.3V
Applicable to VOUTP and
VOUTN pins at 50Ω load.
0.8
V
CCS
-
0.15V
0.9
1.0
V
CCS
V
V
V
V
3.3
60
10
Absolute Maximum Ratings
(1)
(at T
A
= +25
°
C, unless otherwise specified)
Power Supply Voltage (V
CCS
)......................................................................................................................... 3.6V
Power Supply Voltage (V
CCD
) ........................................................................................................................ 5.5V
Junction Temperature Range ........................................................................................................ -40°C to +125°C
Storage Temperature Range ......................................................................................................... -40°C to +125°C
Relative Ambient Humidity ................................................................................................................. 85%/+85°C
NOTE: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without caus-
ing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended
periods may affect device reliability.
Recommended Operating Conditions
Positive Voltage Supply (V
CCS
) ...................................................................................................................... 3.3V
Positive Voltage Supply (V
CCD
)...................................................................................................................... 5.0V
Negative Voltage Rail (GND) ............................................................................................................................ 0V
Ambient Temperature Range (T
A
)
(1)
.............................................................................................. -40°C to +85°C
G52355-0, Rev 2.0
02/09/01
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 3
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
