VITESSE
SEMICONDUCTOR CORPORATION
3.125Gb/s Integrated Transimpedance
and Limiting Amplifier with Signal Detect
Advance Product Information
VSC7969
Bare Die Descriptions
Figure 1: Pad Assignments
1467µm (57.2mil)
Pad 6
VOUTN
Pad 5
SD_ADJ
Pad 4
SD_TP
Pad 7
SD_OUT
Pad 8
GND
Pad 9
VOUTN
Pad 10
GND
Pad 11
VOUTP
Pad 12
GND
Pad 13
IMON
Pad 14
VOUTP
Pad 15
GND
Pad 16
CSDN
1143µm
(45.0mil)
Pad 3
GND
Pad 2
BG_VREF
Pad 1
GND
Pad 26
VCCD
Pad 25
VCCS
Pad 24
GND
VSC7969
Pad 17
CSDP
Pad 18
GND
Pad 19
GND
Pad 23
IN
Pad 22
FILTER
Pad 21
GND
Pad 20
GND
Die Size: 1143µm x 1453µm (45.0mil x 57.2mil)
Die Thickness: 279
µm (11.0mil)
Pad Size:
100µm x 100µm (3.9mil x 3.9mil)
Pad Passivation Opening:
86µm x 86µm (3.4mil x 3.4mil)
Scribe Size: 143µm (5.6mil)
143µm
(5.6mil)
Page 4
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52355-0, Rev 2.0
02/09/01
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
