VSC7969
Data Sheet
Advance Product Information
Subject to Change
.
Table 3. DC Characteristics
Symbol
V
CCS
V
CCD
I
CC
V
OUT_CM
V
ANODE
V
CATHODE
Parameter
Power supply voltage for 3.3V operation
Power supply voltage for 5V operation
(1)
Power supply current
Common-mode voltage on output pins
(VOUTP and VOUTN)
Internal DC bias voltage on detector anode
contact
(1)
Internal DC bias voltage on detector cathode
contact
(1)
External DC bias voltage permissable on
detector cathode contact
(1)
External DC bias voltage for use with Ava-
lanche Photodetector
(1)
0.8
V
CCS
–
0.15
3.3
60
Min
3.0
4.5
Typ
3.3
5.0
65
V
CCS
–
0.125
0.9
1.0
V
CCS
Max
3.6
5.5
75
Units
V
V
mA
V
V
V
Reversed biased
detector with no current
requirement.
3.3V
At 50Ω load
Condition
V
CAT_EXT
V
APD
10
V
V
1.
Not applicable to TO-46 packages (WA-1A, WD-1A).
Table 4. Recommended Operating Conditions
Symbol
V
CC_3.3
V
CC_5
T
Parameter
Power supply voltage for 3.3V operation
Power supply voltage for 5V operation
Operating temperature range
(1)
Min
+3.135
+3.135
0
Typ
+3.3
+5.0
Max
+5.5
+5.5
+85
Unit
V
V
°C
Condition
1.
Lower limit of specification is ambient temperature and upper limit is case temperature.
Table 5. Absolute Maximum Ratings
Symbol
V
CCS
V
CCD
T
J
T
S
Parameter
Power supply voltage
Power supply voltage
Junction temperature
Storage temperature
Min
–0.5
–0.5
–40
–40
Max
3.6
5.5
+125
+125
Unit
V
V
°C
°C
Condition
Stresses listed under Absolute Maximum Ratings may be applied to devices one at a time without causing permanent damage. Functionality at or above the values
listed is not implied. Exposure to these values for extended periods may affect device reliability.
ELECTROSTATIC DISCHARGE
This device can be damaged by ESD. Vitesse recommends that all integrated circuits
be handled with appropriate precautions. Failure to observe proper handling and
installation procedures may adversely affect reliability of the device.
4 of 12
G52355, Rev 2.3
11/22/02
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
