VITESSE
SEMICONDUCTOR CORPORATION
2.5Gb/s High Speed Limiting Post Amplifier
for OC-48/SDH-16 Applications
Table 1: Electrical Specifications
Preliminary Data Sheet
VSC7958
All min and max values are tested at V
SS
= -4.5V and -5.5V, unless otherwise noted. All min and max values are guaranteed from
T
CASE
= 0°C to 85°C, unless otherwise noted.
Symbol
V
IN
±
(1)
(V
IN
+) - (V
IN
-)
(1)
(V
REF
+) - (V
REF
-)
Parameter
Input Voltage Swing
Input Voltage Swing
Input Offset Voltage Swing
Min
-
-
-
320
-
90
-
26
-
-
-
-
-
-
Typ
-
-
10
500
-0.5
100
100
30
3
30
15
15
80
15
Max
800
1600
25
1200
-
110
-
45
-
-
-
-
100
-
Units
mV
p-p
mV
p-p
mV
mV
p-p
V
%
ps
dB
GHz
kHz
dB
dB
mA
dB
µV
rms
°C/W
Conditions
Single-ended source
Differential source
V
IN
= 0
Differential Output Swing.
V
IN
= 8mV, Differential
Input peak-to-peak
Measured to ground
20%-80%, 25°C,
V
IN
= 50mV
V
IN
= 4mV
p-p
single-
ended
25°C, V
IN
= 4mV
p-p
25°C, V
IN
= 4mV
p-p
At 1.5GHz
At 1.5GHz
8kHz to 18GHz
Total single-ended output
noise voltage divided by
small-signal gain. 8kHz to
18GHz
Junction-to-case
(V
OUT
+) - (V
OUT
-) Output Voltage Swing
V
OFFSET
PW%
t
R
, t
F
G
f
MAX(1)
f
MIN(1)
S
11(1)
S
22(1)
I
SS
NF
(1)
V
NR(1)
θ
JC
Output DC Offset Voltage
Output Pulse Width
Rise and Fall Time
Small Signal Gain
Small Signal -3dB Bandwidth
Low Frequency -3dB Cutoff
Input Return Loss Reference to 50Ω
Output Return Loss Reference to 50Ω
Supply Current
Noise Figure
Input Referred Wide Band Noise
-
170
-
Thermal Resistance
-
30
-
NOTE:(1) These values are not measured during production test. These values are results of engineering characterization.
Page 2
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52184-0, Rev 3.0
05/14/01
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
