VITESSE
SEMICONDUCTOR CORPORATION
SONET/SDH 3.125Gb/s
Laser Diode Driver with Automatic Power Control
Preliminary Data Sheet
VSC7940
Bare Die Pad Descriptions
Figure 1: Pad Assignments
1773µm (0.0698")
Pad 9
VCC1
Pad 10
GND1
Pad 11
LATCH
Pad 12
ENABLE
(Pin 7)
Pad 8
CLK-
(Pin 6)
Pad 7
CLK+
(Pin 5)
Pad 6
VCC1
Pad 5
GND1
Pad 4
VCC1
(Pin 4)
Pad 3
DATA-
(Pin 3)
Pad 2
DATA+
(Pin 2)
Pad 1
VCC1
(Pin 1)
Pad 48
GND1
Pad 47
GND2
Pad 46
VCC2
Pad 45
BIASMAX
Pad 44
MODSET
Pad 43
GND2
(Pin 29)
Pad 42
APCSET
Pad 41
RESERVED
Pad 40
GND2
Pad 39
PB_GND
(Pin 27)
Pad 38
GND3
Pad 37
PB_GND
(Pin 26)
Pad 36
CAPC
Pad 35
VCC3
Pad 34
GND3
(Pin 8)
(Pin 32)
20µm
(0.0008")
(Pin 9)
(Pin 31)
Pad 13
(Pin 10)
DISABLE
Pad 14
GND1
Pad 15 (Pin 11)
BIASMON
Pad 16 (Pin 12)
MODMON
(Pin 30)
(Pin 28)
2233µm
(0.0879")
VSC7940
Pad 17
FAIL
Pad 18
GND4
Pad 19
PB_GND
(Pin 13)
Pad 20
APCFILT (Pin 14)
Pad 21
GND4
Pad 22
VCC4
Pad 23
BIAS
(Pin 15)
(Pin 16)
(Pin 25)
(Pin 17)
(Pin 18)
Pad 24
PB_GND1
Pad 25
VCC4
Pad 26
DB_OUT+
(Pin 19)
Pad 27
OUT+
(Pin 20)
Pad 28
OUT-
Pad 29
DB_OUT-
(Pin 21)
Pad 30
VCC4
(Pin 22)
Pad 31
GND4
(Pin 23)
Pad 32
GND3
(Pin 24)
Pad 33
MD
Die Size:
Die Thickness:
Pad Pitch:
Pad to Pad Clearance:
Pad Passivation Opening:
1773µm x 2233µm (0.0698" x 0.0879")
625µm (0.0246")
115µm (0.0045")
20µm (0.0008")
95µm x 95µm (0.0037" x 0.0037")
µ
75µm
(0.0030")
Page 4
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52357-0, Rev 3.2
05/11/01
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
