VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
Single Supply 2.5Gb/s Voltage Driver
VSC7937
Electrical Characteristics
Table 1: High-Speed Inputs and ECL Outputs
V
SS
= -5.2V, R
L
= 50Ω at I
OUT
pin
Symbol
V
IN
V
CM
V
OH
V
OL
V
IN
I
NOUT
Parameter
Single-Ended Input Voltage Swing
Differential Input Common-Mode Range
ECL Output HIGH Voltage
ECL Output LOW Voltage
On-Chip Terminations
Maximum Peak Current
(1)
Min
300
-2.3
-1200
Typ
—
—
—
—
—
—
Max
1500
-1.3
Units
V
mV
mV
Ω
mA
Conditions
V
SS
= -5.2V
50Ω to -2.0V
50Ω to -2.0V
VIP = VSS + 1.4V
VIB1 = -5.2V
VIB2 = -5.2V
DIN = LOW
VIP = -4.1V
VIB1 = -5.2V
VIB2 = -5.2V
DIN = HIGH
20% to 80%
VIP = -4.1V
VIB1 = -5.2V
VIB2 = -5.2V
DIN = LOW
mVp-p V
CM
= -2.0V
—
-1600
65
—
—
35
60
I
NOUT
t
R,
t
F
V
OUT
t
SU
t
H
Maximum Peak Current
Rise and Fall Times
Output Voltage
Set-up Time - Data to CLK
Hold Time
—
—
—
20
—
—
—
—
50
50
4
100
-3.0
—
90
mA
ps
V
ps
ps
NOTE: (1) 100mA when R
L
= 30Ω at (N) OUT pin.
Table 2: DC Characteristics
Symbol
V
SS
I
BIAS1,
I
BIAS2
V
DCC
V
IH
V
IL
VIB1, VIB2
VIP
Parameter
Power Supply Voltage
Maximum Bias Current
Duty-Cycle Control Voltage
HIGH Level Input Voltage
LOW Level Input Voltage
BIAS Control Voltage
Modulation Control Voltage
Min
-5.5
30
V
SS
-1.15
—
V
SS
V
SS
Typ
-5.2
—
—
-0.9
-1.7
—
—
Max
-4.75
—
V
SS
+
3V
-0.8
-1.45
V
SS
+1.8
V
SS
+1.4
Units
V
mA
V
V
V
V
V
Conditions
VIB1, 2 = VSS + 1.8V
VIP = -5.2V
V
REF
= 1.3V
V
REF
= 1.3V
Page 2
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52200-0, Rev 3.0
03/05/01
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
