VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
SC7937
Table 5: Recommended Operating Conditions
Symbol
GND
VSS
VIH
VIL
VIB1
VIB2
VIP
T
C
Single Supply 2.5 Gb/s
Voltage Driver
Parameter
Positive Voltage Rail
Negative Voltage Rail
HIGH Level Input Voltage
LOW Level Input Voltage
BIAS Control Voltages
Modulation Control Voltage
Operational Case Temperature
Min
-5.5
-1.0
—
VSS
VSS
-40
Typ
0
-5.2
-0.9
-1.7
Max
-4.75
-0.8
-1.6
VSS +1.8
VSS +1.4
85*
Units
V
V
V
V
V
V
°C
Conditions
VREF = -1.3V
VREF = -1.3V
V
SS
= -5.2
I
MOD
= 60mA
I
BIAS
= 30mA
Note: *Lower limit of specification is ambient temperature and upper limit is case temperature
Table 6: Power Dissipation
Symbol
I
VSS
Pd
Parameter
Power Supply Current (VSS)
Total Power Dissipation
Min
—
—
Typ
—
-
—
Max
120
700
Units
mA
mW
Conditions
V
SS
= -5.5, I
MOD
= I
BIAS
= 0 mA,
MK/NMK open circuit
V
SS
= -5.5, I
MOD
= I
BIAS
= 0 mA,
Rload = 25 Ohms to GND, MK/NMK
terminated 50Ω to -2V
Table 7: Electrical Specifications
(Vss = -5.2V, RL = 50
Ω
at I
OUT
Pin)
Symbol
I
NOUT
Parameter
Maximum Peak Current
Min
60
Typ
—
Max
—
Units
mA
Conditions
VIP = VSS + 1.4V
VIB1 = -5.2V
VIB2 = -5.2V
DIN = “Lo”
VIP = -4.1V
VIB1 = -5.2V
VIB2 = -5.2V
DIN = “Hi”
VIB1, 2 = VSS + 1.8V
VIP = -5.2V
20% to 80%
20% to 80%
VIP = -4.1V
VIB1 = -5.2V
VIB2 = -5.2V
DIN = “Lo”
I
NOUT
I
BIAS1,
I
BIAS2
t
r
t
f
V
OUT
Maximum Peak Current
—
—
4
mA
Maximum Bias Current
Rise Time
Fall Time
Output Voltage
30
—
—
—
—
—
—
—
—
100
100
-3.0
mA
ps
ps
V
G52200-0, Rev 2.2
5/22/00
VITESSE
SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896
Page 3
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