VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
SONET/SDH 2.5Gb/s Laser Diode Driver
VSC7927
Table 5: High Speed Inputs and ECL Outputs
Symbol
Parameter
Min
Typ
Max
Units
Conditions
VIN
Single-ended Input Voltage Swing
Differential Input Common Mode Range
ECL Output High Voltage
300
-2.3
-1200
—
—
—
—
—
—
1500
-1.3
—
mVp-p VCM = -2.0V
VCM
VOH
VOL
VIN
V
mV
mV
Ω
VSS = -5.2V
50Ω to -2.0V
50Ω to -2.0V
ECL Output Low Voltage
-1600
65
On-Chip Terminations
35
Table 6: Power Dissipation
Symbol
Parameter
Min
Typ
Max
Units
Conditions
VSS = -5.5V, IMOD = IBIAS
0mA, MK/NMK open circuit
SS = -5.5V, IMOD = IBIAS
=
IVSS
Power Supply Current (VSS)
Total Power Dissipation
—
—
—
120
700
mA
V
=
PD
—
mW
0mA, RLOAD = 25Ω to GND,
MK/NMK terminated 50Ω to -2V
Table 7: Laser Driver DC Electrical Specifications
Symbol
Parameter
Min
Typ
Max
Units
Conditions
IBIAS
IMOD
Programmable Laser Bias Current
Programmable Modulation Current
2
2
—
—
100
100
mA
mA
—
—
VSS
2.1
+
VIB
Laser Bias Control Voltage
Laser Modulation Control Voltage
Output Voltage Compliance
—
—
—
—
—
V
V
V
I
BIAS = 50mA
MOD= 60mA
VSS
2.1
+
VIP
I
GND -
3V
VOCM
—
VSS = -5.2V
Table 8: Laser Driver AC Electrical Specifications
Symbol
Parameter
Min
Typ
Max
Units
Conditions
25Ω load, 20%-80%,
20mA < IMOD < 60mA,
IBIAS = 60mA
tR, tF
Output Rise and Fall Times
—
—
100
ps
tSU
tH
Data to Clock Setup Time
Hold Time
—
50
50
90
ps
ps
—
—
20
—
Table 9: Package Thermal Specifications
Symbol
Parameter
Min
Typ
25
Max
Units
°C/W
Conditions
θJCC
Thermal Resistance from Junction-to-Case
—
—
Ceramic Package
G52201-0, Rev 3.0
04/05/01
Page 3
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
