VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7925
Table 4: Recommended Operating Conditions
Symbol
GND
V
SS
T
CASE KF
SONET/SDH 2.5Gb/s Laser Diode Driver
Parameter
Positive Voltage Rail
Negative Voltage Rail
Operational Temperature9.0 pt
Min
-5.5
-40
Typ
0
-5.2
Max
-4.9
85
Units
V
V
°C
Conditions
Power dissipation = 1.3W
Ceramic Package
NOTE: (1) Lower limit of specification is ambient temperature and upper limit is case temperature.
Table 5: Power Dissipation
Symbol
I
VSS
P
D
Parameter
Power Supply Current (V
SS
)
Total Power Dissipation
Min
Typ
Max
220
1200
Units
mA
mW
Conditions
I
MOD
= I
BIAS
= 0mA
V
SS
= -5.5V, I
MOD
= I
BIAS
= 0mA,
R
LOAD
= 25Ω to GND
Table 6: Laser Driver DC Electrical Specifications
Symbol
I
BIAS
I
MOD
V
IB
V
IP
V
OCM
Parameter
Programmable Laser Bias Current
Programmable Modulation Current
Laser Bias Control Voltage
Laser Modulation Control Voltage
Output Voltage Compliance
Min
2
2
Typ
-
Max
50
60
V
SS
+
2.1
V
SS
+
2.1
Units
mA
mA
V
V
V
Conditions
I
BIAS
= 50mA
I
MOD
= 60mA
V
SS
= -5.2V
GND
-2.5V
Table 7: Laser Driver AC Electrical Specifications
Symbol
t
R
, t
F
t
SU
t
H
Parameter
Output Rise and Fall Times
Data to Clock Setup Time
Hold Time
Min
Typ
Max
100
Units
ps
ps
ps
Conditions
25Ω load, 20%-80%,
15mA < I
MOD
< 60mA,
I
BIAS
= 20mA
50
50
G52157-0, Rev 3.2
05/01/01
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 3
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