VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
SONET/SDH 2.5Gb/s Laser Diode Driver
Table 1: Signal Pin Reference
Signal
DIN
MK, NMK
NIOUT
IOUT
VSS
GND
VIP
MIP
VIB
MIB
VREF
TERM
Total Pins
VSC7924
Description
Data Input
Data Density Differential Outputs
Laser Modulation Current Output (Complementary)
Laser Modulation Current Output (To Laser Cathode))
Negative Voltage Rail
Positive Voltage Rail
Modulation Gate Node
Modulation Source Node
Bias Gate Node
Bias Source Node
Data Input Reference
Data Input Reference
Type
In
Out
Out
Out
Pwr
Pwr
In
In
In
In
In
In
Level
ECL
ECL
# Pins
1
2
1
1
Pwr
Pwr
DC
DC
DC
DC
DC
DC
5
8
1
1
1
1
1
1
24
Table 2: Absolute Maximum Ratings
Symbol
V
SS
T
J
T
STG
Rating
Negative Power Supply Voltage
Maximum Junction Temperature
Storage Temperature
Limit
V
CC
to -6.0V
-55°C to + 125°C
-65°C to +150°C
Table 3: ECL Input and Outputs
Symbol
V
IN
V
OH
V
OL
Parameter
Input Voltage Swing
ECL Output High Voltage
ECL Output Low Voltage
Min
300
-1200
-2000
Typ
Max
800
-700
-1600
Units
mV
mV
mV
Conditions
Peak-to-peak, V
REF
= -1.3V
50Ω to -2.0V
50Ω to -2.0V
Table 4: Recommended Operating Conditions
Symbol
GND
VSS
T
Cl
T
J
Parameter
Positive Voltage Rail
Negative Voltage Rail
Operational Temperature
(1)
Junction Temperature
Min
-5.5
-40
Typ
0
-5.2
Max
-4.9
85
(2)
125
Units
V
V
°C
°C
Conditions
Power dissipation = 1.25W
NOTES: (1) Lower limit of specification is ambient temperature and upper limit is case temperature.
(2) See “Calculation of the Maximum Case Temperature” section for detailed maximum temperature calculations.
Page 2
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VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52156-0, Rev 3.0
05/01/01
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
