VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
SONET/SDH 2.5Gb/s Laser Diode Driver
VSC7923
Table 5: Power Dissipation
Symbol
Parameter
Min
Typ
Max
Units
Conditions
IVSS
Power Supply Current (VSS)
—
—
220
mA
VSS = -5.5V, IMOD = IBIAS = 0mA
VSS = -5.5V, IMOD = IBIAS = 0mA,
PD
Total Power Dissipation
—
—
—
—
1210
1815
mW
mW
RLOAD = 25Ω to GND
VSS = -5.5V, IMOD = 60mA,
IBIAS = 50mA, IOUT = 0V
PDMAX
Maximum Power Dissipation
Table 6: Laser Driver DC Electrical Specifications
Symbol
Parameter
Min
Typ
Max
Units
Conditions
IBIAS
IMOD
Programmable Laser Bias Current
Programmable Modulation Current
2
2
—
—
50
60
mA
mA
—
—
VSS
2.1
+
VIB
Laser Bias Control Voltage
Laser Modulation Control Voltage
Output Voltage Compliance
—
—
—
—
—
V
V
V
I
BIAS = 50mA
MOD= 60mA
VSS
2.1
+
VIP
I
GND -
2.2V
VOCM
—
VSS = -5.2V
Table 7: Laser Driver AC Electrical Specifications
Symbol
Parameter
Min
Typ
Max
Units
Conditions
25Ω load, 20%-80%,
15mA < IMOD < 60mA,
IBIAS = 20mA
tR, tF
Output Rise and Fall Times
—
—
100
ps
Table 8: Package Thermal Specifications
Symbol
Parameter
Min
Typ
Max
Units
Conditions
θJCC
Thermal Resistance from Junction-to-Case
Thermal Resistance from Junction-to-Case
—
—
25
32
—
—
°C/W Ceramic Package
θJCMG
°C/W Metal Glass Package
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52203-0, Rev 3.0
05/11/01
Page 3
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