VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Table 1: Electro-Optical Specifications
(1)
Symbol
V
SS
I
DD
PSRR
λ
F
c
BW
S
R
o
V
D
R
D
V
DC
∆V
DC
NEP
O
V
NO
DCD
I
OUT
PDJ
Advance Product Information
VSC7807
Typ
(2)
3.3
-
-10
840
1.0
1300
20
25
-
2.0
-
-
1
-
-
2.6
-
70
190
-
-
Parameters
Supply Voltage
Supply Current
Power Supply Rejection Ratio
Wavelength
Low Frequency Cutoff
Optical Modulation Bandwidth
Sensitivity
Single-Ended Output Impedance
Differential Output Voltage
Differential Responsivity
Output Bias Voltage
Bias Offset Voltage
Input Noise Equivalent Power
Output Noise Voltage
Duty Cycle Distortion
Output Drive Current
Pattern Dependent Jitter
Optically Active Area
Min
3.0
-
-
700
-
-
-
-
0.2
1.6
1.0
-
-
-
-
2.0
-
-
-
-
-
Max
3.6
40
-
850
2.5
-
-
-
-
-
-
200
2.2
1.25
4.5
-
40
-
200
200
200
Units
V
mA
dB
nm
MHz
MHz
dBm
Ω
V
mV/µW
V
mV
µW
rms
mV rms
%
mA
ps
µm
ps
ps
ps
Conditions
Frequencies up to 40MHz.
Use external filter to get PSRR
of -35dB
(3)
.
-3dB, P
(4)
= -15dBm
-3dB, P = -15dBm
2.488Gb/s, BER10
-12(5)
P = -5 dBm,
R
L
= 100Ω differential
R
L
= 100Ω
At 50MHz
P = 0mW
P = 0mW
P = -5dBm
P = -5dBm
P = -5dBm
+/-10% Voltage Window
Diameter
P = -5dBm
20% to 80% P = -5dBm
20% to 80% P = -5dBm
PPJ
T
R
T
F
PP Jitter
Rise Time
Fall Time
NOTES: (1) Specified over 10°C to 90°C junction. (2) Typical conditions 25°C and 3.3V power supply. (3) See Note 1 in Appli-
cation Note 48. (4) P = Incident Optical Power. (5) See Note 2 In Application Note 48.
Page 2
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VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52363-0, Rev 2.1
04/05/01
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
