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VF60100C_15 参数 Datasheet PDF下载

VF60100C_15图片预览
型号: VF60100C_15
PDF下载: 下载PDF文件 查看货源
内容描述: [Dual High-Voltage Trench MOS Barrier Schottky Rectifier]
分类和应用:
文件页数/大小: 5 页 / 81 K
品牌: VISHAY [ VISHAY ]
 浏览型号VF60100C_15的Datasheet PDF文件第1页浏览型号VF60100C_15的Datasheet PDF文件第2页浏览型号VF60100C_15的Datasheet PDF文件第4页浏览型号VF60100C_15的Datasheet PDF文件第5页  
VF60100C  
Vishay General Semiconductor  
www.vishay.com  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
35  
30  
25  
20  
15  
10  
5
1000  
100  
10  
DC Current, per Diode  
TA = 150 °C  
TA = 125 °C  
TA = 100 °C  
1
0.1  
TA = 25 °C  
0.01  
0.001  
0
0
25  
50  
75  
100  
125  
150  
175  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
Percent of Rated Peak Reverse Voltage (%)  
Case Temperature (°C)  
Fig. 1 - Maximum Forward Current Derating Curve  
Fig. 4 - Typical Reverse Characteristics Per Diode  
30  
10 000  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
D = 0.8  
D = 0.5  
25  
20  
15  
10  
5
D = 0.3  
D = 1.0  
D = 0.2  
1000  
D = 0.1  
T
D = tp/T  
tp  
0
100  
0
5
10  
15  
20  
25  
30  
35  
0.1  
1
10  
100  
Average Forward Current (A)  
Reverse Voltage (V)  
Fig. 2 - Forward Power Loss Characteristics Per Diode  
Fig. 5 - Typical Junction Capacitance Per Diode  
100  
TA = 150 °C  
TA = 125 °C  
10  
TA = 100 °C  
1
TA = 25 °C  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1
Instantaneous Forward Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode  
Revision: 17-Aug-15  
Document Number: 89394  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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