VBT4045C-M3
Vishay General Semiconductor
www.vishay.com
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.28 V at IF = 5.0 A
FEATURES
TMBS®
TO-263AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
2
please see www.vishay.com/doc?99912
1
VBT4045C
TYPICAL APPLICATIONS
PIN 1
PIN 2
K
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
HEATSINK
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
Package
TO-263AB
2 x 20 A
45 V
IF(AV)
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
VRRM
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
IFSM
240 A
VF at IF = 20 A
TJ max.
0.41 V
150 °C
Polarity: As marked
Diode variation
Common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT4045C
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
40
20
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
240
A
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
Revision: 30-Apr-13
Document Number: 87958
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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