VBT2045C-E3
Vishay General Semiconductor
www.vishay.com
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 5.0 A
FEATURES
TMBS®
TO-263AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
TYPICAL APPLICATIONS
VBT2045C
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 1
PIN 2
K
HEATSINK
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
2 x 10 A
45 V
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
VRRM
Base P/N-E3 - RoHS-compliant, commercial grade
IFSM
160 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF at IF = 10 A
TJ max.
Package
0.41 V
150 °C
TO-263AB
Polarity: As marked
Diode variations
Dual common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT2045C
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
20
10
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
160
A
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Revision: 17-Aug-15
Document Number: 89359
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000