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V80100PW_15 参数 Datasheet PDF下载

V80100PW_15图片预览
型号: V80100PW_15
PDF下载: 下载PDF文件 查看货源
内容描述: [Dual High-Voltage Trench MOS Barrier Schottky Rectifier]
分类和应用:
文件页数/大小: 4 页 / 81 K
品牌: VISHAY [ VISHAY ]
 浏览型号V80100PW_15的Datasheet PDF文件第2页浏览型号V80100PW_15的Datasheet PDF文件第3页浏览型号V80100PW_15的Datasheet PDF文件第4页  
V80100PW  
Vishay General Semiconductor  
www.vishay.com  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.43 V at IF = 10 A  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
TO-3PW  
For use in high frequency converters, switching power  
supplies, freewheeling diodes, OR-ing diode, DC/DC  
converters and reverse battery protection.  
PIN 1  
PIN 3  
PIN 2  
CASE  
MECHANICAL DATA  
Case: TO-3PW  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3  
commercial grade  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
2 x 40 A  
100 V  
- halogen-free, RoHS-compliant, and  
450 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
E
AS at L = 180 mH  
VF at IF = 40 A  
TJ max.  
700 mJ  
0.64 V  
Polarity: As marked  
150 °C  
Mounting Torque: 10 in-lbs maximum  
Package  
TO-3PW  
Diode variations  
Dual common cathode  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V80100PW  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
100  
80  
V
per device  
per diode  
Maximum average forward rectified current (fig. 1)  
IF(AV)  
A
40  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
450  
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 180 mH per diode  
EAS  
700  
1.0  
mJ  
A
Peak repetitive reverse current at tp = 2 μs, 1 kHz,  
TJ = 38 °C 2 °C per diode  
IRRM  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +150  
Revision: 20-Dec-13  
Document Number: 89183  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000