TEFD4300F
Vishay Semiconductors
www.vishay.com
BASIC CHARACTERISTICS (Tamb = 25 ꢀC, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
1
MAX.
UNIT
V
Forward voltage
Breakdown voltage
Reverse dark current
IF = 50 mA
VF
-
60
-
-
IR = 100 μA, E = 0
V(BR)
Iro
-
-
V
VR = 10 V, E = 0
0.15
3.3
1.2
350
-2.6
15
3
nA
V
R = 0 V, f = 1 MHz, E = 0
R = 5 V, f = 1 MHz, E = 0
CD
-
-
pF
Diode capacitance
V
CD
-
-
pF
Open circuit voltage
Temperature coefficient of VO
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
VOC
TKVo
Ik
-
-
mV
mV/K
μA
-
-
-
-
Temperature coefficient of Ik
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V
TKIk
Ira
-
0.1
17
-
%/K
μA
9
-
27
ϕ
20
-
deg
nm
nm
ns
λp
-
950
-
-
λ0.5
tr
770
-
1070
V
R = 10 V, RL = 1 kΩ, λ = 820 nm
R = 10 V, RL = 1 kΩ, λ = 820 nm
100
100
-
-
Fall time
V
tf
-
ns
BASIC CHARACTERISTICS (Tamb = 25 ꢀC, unless otherwise specified)
1.4
10-6
10-7
VR = 10 V
VR = 5 V
λ = 950 nm
1.2
10-8
1.0
10-9
10-10
0.8
10-11
0.6
10-12
20
40
80
100
60
0
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
94 8416
Tamb - Ambient Temperature (ꢀC)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.3, 13-Jan-17
Document Number: 83472
2
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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