T..RIA Series
Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A
Vishay High Power Products
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
T50RIA T70RIA T90RIA UNITS
50
70
90
A
°C
A
Maximum average on-state current
at case temperature
IT(AV)
180° conduction, half sine wave
70
70
70
Maximum RMS on-state current
IT(RMS)
80
110
141
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
1310
1370
1100
1150
8550
7800
6050
5520
1660
1740
1400
1460
1780
1870
1500
1570
No voltage
reapplied
Maximum peak, one-cycle
on-state, non-repetitive
surge current
ITSM
A
100 % VRRM
reapplied
Sine half wave,
initial TJ = TJ maximum
13 860 15 900
12 650 14 500
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
9800
8950
11 250
10 270
100 % VRRM
reapplied
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
85 500 138 500 159 100
A2√s
Low level value of
threshold voltage
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum
0.97
1.13
4.1
0.77
0.88
3.6
0.78
0.88
2.9
V
High level value of
threshold voltage
VT(TO)2
rt1
(I > π x IT(AV)), TJ maximum
Low level value of
on-state slope resistance
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum
(I > π x IT(AV)), TJ maximum
mΩ
High level value of
on-state slope resistance
rt2
3.3
3.2
2.6
ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square
Maximum on-state voltage drop
VTM
1.60
1.55
1.55
V
V
2
Average power = VT(TO) x IT(AV) + rf x (IT(RMS)
)
ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square
Maximum forward voltage drop
Maximum holding current
Maximum latching current
VFM
IH
1.60
200
400
1.55
200
400
1.55
200
400
2
Average power = VT(TO) x IT(AV) + rf x (IT(RMS)
)
Anode supply = 6 V, initial IT = 30 A, TJ = 25 °C
mA
Anode supply = 6 V, resistive load = 10 Ω
Gate pulse: 10 V, 100 µs, TJ = 25 °C
IL
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TJ = 25 °C, Vd = 50 % VDRM, ITM = 50 A
Ig = 500 mA, tr ≤ 0.5, tp ≥ 6 µs
Typical turn-on time
tgd
trr
0.9
3
Typical reverse recovery time
Typical turn-off time
TJ = 125 °C, ITM = 50 A, tp = 300 µs, dI/dt = 10 A/µs
µs
TJ = TJ maximum, ITM = 50 A, tp = 300 µs
-dI/dt = 15 A/µs, VR = 100 V, linear to 80 % VDRM
tq
110
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Document Number: 93756
Revision: 03-Jun-08
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