SS32 thru SS36
Vishay General Semiconductor
100
1000
T
J
= 125 °C
Instantaneous Forward Current (A)
10
T
J
= 150 °C
Pulse
Width
= 300
µs
1
%
Duty Cycle
1
Junction Capacitance (pF)
T
J
= 25 °C
100
0.1
SS32 - SS34
SS35 & SS36
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0.1
SS32 - SS34
SS35 & SS36
1
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
10
T
A
= 125 °C
1
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
SS32 - SS34
SS35 & SS36
100
10
0.1
T
A
= 75 °C
0.01
T
A
= 25 °C
0.001
0
20
40
60
80
100
1
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Current Characteristics
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AB (SMC)
Cathode Band
0.185 (4.69)
MAX.
Mounting Pad Layout
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
MIN.
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
MIN.
0.320 REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number: 88751
Revision: 23-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
VISHAY [ VISHAY TELEFUNKEN ]
