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SS2P5-E3/84A 参数 Datasheet PDF下载

SS2P5-E3/84A图片预览
型号: SS2P5-E3/84A
PDF下载: 下载PDF文件 查看货源
内容描述: 高电流密度表面贴装肖特基整流器 [High-Current Density Surface Mount Schottky Rectifier]
分类和应用:
文件页数/大小: 4 页 / 93 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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SS2P5 & SS2P6
New Product
Vishay General Semiconductor
High-Current Density Surface Mount Schottky Rectifier
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case:
DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes the cathode end
DO-220AA (SMP)
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
T
j
max.
2A
50 V, 60 V
50 A
11.25 mJ
0.54 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy
at I
AS
= 1.5 A, L = 10 mH, T
j
= 25 °C
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
AS
dv/dt
T
J,
T
STG
SYMBOL
SS2P5
25
50
2.0
50
11.25
10000
- 55 to + 150
SS2P6
26
60
V
A
A
mJ
V/us
°C
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
(1)
Maximum reverse current at rated V
R (1)
Typical junction capacitance
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Document Number 88943
23-Jun-06
www.vishay.com
1
TEST CONDITIONS
at I
F
= 2 A, T
j
= 25 °C
at I
F
= 2 A, T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
at 4.0 V, 1 MHz
SYMBOL
V
F
I
R
C
J
TYP
0.62
0.54
-
1.6
80
MAX.
0.70
0.60
100
10
UNIT
V
µA
mA
pF