SS22 thru SS26
Vishay General Semiconductor
100
1000
Instantaneous Forward Current (A)
10
T
J
= 150 °C
Pulse
Width
= 300
µs
1
%
Duty Cycle
1
Junction Capacitance (pF)
T
J
= 25 °C
T
J
= 125 °C
100
0.1
SS22 - SS24
SS25 & SS26
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
SS22 - SS24
SS25 & SS26
10
0.1
1
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
10
100
0.01
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
Instantaneous Reverse Current (mA)
SS22 - SS24
SS25 & SS26
10
T
A
= 125 °C
1
T
A
= 75 °C
0.1
T
A
= 25 °C
0.01
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Current Characteristics
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 MAX.
(2.159 MAX.)
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 MIN.
(2.18 MIN.)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 MIN.
(1.52 MIN.)
0.220 REF
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.2)
0 (0)
Document Number: 88748
Revision: 23-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3