New Product
SS12 thru SS16
Vishay General Semiconductor
100
1000
T
J
= 125 °C
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Instantaneous Forward Current (A)
10
T
J
= 150 °C
1
T
J
= 25 °C
0.1
Pulse Width = 300 µs
1 % Duty Cycle
SS12 thru SS14
SS15 and SS16
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Junction Capacitance (pF)
100
SS12 thru SS14
SS15 and SS16
10
0.1
1
10
100
0.01
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
Instantaneous Reverse Current (mA)
SS12 thru SS14
SS15 and SS16
10
T
J
= 125 °C
1
0.1
T
J
= 75 °C
0.01
T
J
= 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 89406
Revision: 18-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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