SM6T Series
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
6000
P
PPM
- Peak Pulse Power (kW)
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
1000
10
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
100
V
R
, Measured at
Stand-Off
Voltage V
WM
Uni-Directional
Bi-Directional
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
200
10
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1
10
t
d
- Pulse Width (s)
V
WM
- Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
75
Transient Thermal Impedance (°C/W)
10
50
1.0
25
0
0
25
50
75
100
125
150
175
200
0.1
0.001
0.01
0.1
1
10
100
1000
T
J
- Initial Temperature (°C)
t - Pulse Duration (s)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Typical Transient Thermal Impedance
150
200
I
PPM
- Peak Pulse Current, % I
RSM
Peak Forward Surge Current (A)
t
r
= 10 µs
Peak Value
I
PPM
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
100
Half Value - I
PP
I
PPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
10
1
10
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 24-Jan-2019
Document Number: 88385
3
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