SM6T Series
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
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•
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•
•
•
•
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Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
Available
600 W peak pulse power capability with a
10/1000 μs waveform
Excellent clamping capability
Low inductance
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMB (DO-214AA)
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PRIMARY CHARACTERISTICS
V
WM
V
BR
uni-directional
V
BR
bi-directional
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
5.80 V to 188 V
6.8 V to 220 V
6.8 V to 220 V
600 W
5.0 W
100 A
150 °C
Uni-directional, bi-directional
SMB (DO-214AA)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity:
for uni-directional types the band denotes cathode
end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SM6T12CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform
(1)(2)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
(fig. 3)
Power dissipation on infinite heatsink at T
A
= 50 °C
Peak forward surge current 10 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
T
J
, T
STG
VALUE
600
See next table
5.0
100
-65 to +150
UNIT
W
A
W
A
°C
Revision: 14-Jul-17
Document Number: 88385
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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