Si9410DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.030 @ V
GS
= 10 V
30
0.040 @ V
GS
= 5 V
0.050 @ V
GS
= 4.5 V
I
D
(A)
7.0
6.0
5.4
D D D D
SO-8
N/C
S
S
G
1
2
3
4
Top View
S
Ordering Information: Si9410DY
Si9410DY-T1 (with Tape and Reel)
S
8
7
6
5
D
D
D
D
G
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
Symbol
V
DS
V
GS
Limit
30
"20
7.0
5.8
30
2.8
2.5
1.6
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70122
S-31060—Rev. M, 26-May-03
www.vishay.com
Symbol
R
thJA
Limit
50
Unit
_C/W
1