欢迎访问ic37.com |
会员登录 免费注册
发布采购

SI7806BDN 参数 Datasheet PDF下载

SI7806BDN图片预览
型号: SI7806BDN
PDF下载: 下载PDF文件 查看货源
内容描述: N通道30 -V (D -S )快速开关MOSFET [N-Channel 30-V (D-S) Fast Switching MOSFET]
分类和应用: 开关
文件页数/大小: 6 页 / 108 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
 浏览型号SI7806BDN的Datasheet PDF文件第2页浏览型号SI7806BDN的Datasheet PDF文件第3页浏览型号SI7806BDN的Datasheet PDF文件第4页浏览型号SI7806BDN的Datasheet PDF文件第5页浏览型号SI7806BDN的Datasheet PDF文件第6页  
Si7806BDN
New Product
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(Ω)
0.0145 at V
GS
= 10 V
0.0205 at V
GS
= 4.5 V
I
D
(A)
12.6
10.6
FEATURES
• TrenchFET
®
Power MOSFETS
• PWM Optimized
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
RoHS
COMPLIANT
APPLICATIONS
• DC/DC Converters
- Secondary Synchronous Rectifier
- High-Side MOSFET in Synchronous Buck
PowerPAK 1212-8
3.30 mm
S
1
2
3
S
S
3.30 mm
D
G
4
D
8
7
6
5
D
D
D
G
Bottom
View
Ordering Information: Si7806BDN-T1-E3 (Lead (Pb)-free)
S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
30
± 20
12.6
10.1
40
3.2
3.8
2.0
- 55 to 150
1.3
1.5
0.8
8.0
6.4
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
24
65
1.9
Maximum
33
81
2.4
Unit
°C/W
Document Number: 73081
S-60790-Rev. B, 08-May-06
www.vishay.com
1