Si7806DN
New Product
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
14.4
12.6
r
DS(on)
(W)
0.011 @ V
GS
= 10 V
0.0175 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
PWM Optimized
D
New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D
DC/DC Converters
– Secondary Synchronous Rectifier
– High-Side MOSFET in Synchronous Buck
PowerPAKt 1212-8
D
S
1
2
3
4
D
8
7
6
5
D
D
D
S
S
G
3.30 mm
3.30 mm
G
S
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
30
"20
14.4
Steady State
Unit
V
9.2
7.4
40
A
I
D
I
DM
I
S
P
D
T
J
, T
stg
11.6
3.2
3.8
2.0
–55 to 150
1.3
1.5
0.8
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71869
S-20805—Rev. A, 17-Jun-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
24
65
1.9
Maximum
33
81
2.4
Unit
_C/W
C/W
1
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