Si7218DN
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)
24
Available
• TrenchFET® Power MOSFET
0.025 at VGS = 10 V
0.033 at VGS = 4.5 V
30
5 nC
21
APPLICATIONS
PowerPAK® 1212-8
•
•
•
Synchronous Rectification
Notebook System Power
POL
S1
3.30 mm
3.30 mm
1
D
1
D
2
G1
2
S2
3
G2
4
D1
8
D1
7
G
1
G
2
D2
6
D2
5
Bottom View
S
S
2
1
Ordering Information: Si7218DN-T1-E3 (Lead (Pb)-free)
Si7218DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
20
V
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
24
19
8a, b
6.5a, b
35
Continuous Drain Current (TJ = 150 °C)
ID
A
Pulsed Drain Current
IDM
IS
T
C = 25 °C
19
Continuous Source-Drain Diode Current
2.2a, b
10
TA = 25 °C
L = 0.1 mH
TC = 25 °C
IAS
EAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
mJ
W
5
23
14.8
2.6a, b
1.7a, b
T
C = 70 °C
Maximum Power Dissipation
PD
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC
Typical
38
Maximum
Unit
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
48
°C/W
4.3
5.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 94 °C/W.
f. Based on TC = 25 °C.
Document Number: 73958
S-83044-Rev. C, 22-Dec-08
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