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SI4804DY-T1 参数 Datasheet PDF下载

SI4804DY-T1图片预览
型号: SI4804DY-T1
PDF下载: 下载PDF文件 查看货源
内容描述: 双N通道30 -V (D -S )的MOSFET [Dual N-Channel 30-V (D-S) MOSFET]
分类和应用:
文件页数/大小: 4 页 / 64 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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Si4804DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
I
D
(A)
7.5
6.5
D
1
D
1
D
2
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information: Si4804DY
Si4804DY-T1 (with Tape and Reel)
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
30
"20
7.5
6.0
20
1.7
2.0
1.3
Steady State
Unit
V
5.7
4.6
A
A
W
_C
0.9
1.1
0.7
−55
to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71088
S-31989—Rev. D, 13-Oct-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
52
93
35
Maximum
62.5
110
40
Unit
_C/W
C/W
1