Si4410DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
D
TrenchFETr Power MOSFET
I
D
(A)
10
8
r
DS(on)
(W)
0.0135 @ V
GS
= 10 V
0.020 @ V
GS
= 4.5 V
D
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4410DY-REVA
Si4410DY-T1-REVA (with Tape and Reel)
Si4410DY-REVA-E3 (Lead free)
Si4410DY-T1-A-E3 (Lead free with Tape and Reel)
8
7
6
5
D
D
D
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
10
8
50
2.3
2.5
1.6
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 71726
S-40838—Rev. L, 03-May-04
www.vishay.com
Symbol
R
thJA
R
thJF
Limit
50
22
Unit
_C/W
1