Si4416DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
1800
Capacitance
r
DS(on)
- On-Resistance (
W
)
0.08
C - Capacitance (pF)
1500
C
iss
1200
0.06
900
0.04
V
GS
= 4.5 V
0.02
V
GS
= 10 V
600
C
oss
300
C
rss
0.00
0
10
20
30
40
50
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 9 A
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 9 A
6
r
DS(on)
- On-Resistance (
W)
(Normalized)
10
15
20
25
8
1.4
1.2
4
1.0
2
0.8
0
0
5
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60
0.10
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
10
r
DS(on)
- On-Resistance (
W
)
0.08
I
S
- Source Current (A)
0.06
I
D
= 9 A
0.04
T
J
= 25_C
0.02
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72266
S-31062—Rev. E, 26-May-03
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