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SI2301DS-T1 参数 Datasheet PDF下载

SI2301DS-T1图片预览
型号: SI2301DS-T1
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道1.25 -W 2.5 -V族MOSFET的 [P-Channel 1.25-W, 2.5-V MOSFET]
分类和应用: 晶体晶体管PC
文件页数/大小: 4 页 / 56 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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Si2301DS
Vishay Siliconix
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 20
r
DS(on)
(W)
0.130 @ V
GS
= - 4.5 V
0.190 @ V
GS
= - 2.5 V
I
D
(A)
- 2.3
- 1.9
TO-236
(SOT-23)
G
1
3
D
Ordering Information: Si2301DS-T1
S
2
Top View
Si2301DS (A1)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
- 20
"8
- 2.3
- 1.5
- 10
- 1.6
1.25
0.8
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t
v
5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70627
S-31990—Rev. E, 13-Oct-03
www.vishay.com
R
thJA
Symbol
Limit
100
166
Unit
_C/W
1