SFH690ABT/ AT/ BT/ CT
Vishay Semiconductors
Output
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
t
p
≤
1.0 ms
Power dissipation
Test condition
Symbol
V
CE
V
EC
I
C
I
C
P
diss
Value
70
7.0
50
100
150
Unit
V
V
mA
mA
mW
Coupler
Parameter
Isolation test voltage between
emitter and detector (1.0 s)
Creepage
Clearance
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDEO 0303, part 1
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
max. 10 s Dip soldering distance
to seating plane
≥1.5
mm
R
IO
R
IO
T
stg
T
amb
T
j
T
sld
Test condition
Symbol
V
ISO
Value
3750
≥
5.33
≥
5.08
≥
0.4
≥
175
≥
10
12
≥
10
11
- 55 to + 150
- 55 to + 100
100
260
Ω
Ω
°C
°C
°C
°C
Unit
V
RMS
mm
mm
mm
200
P –Power Dissipation (mW)
tot
150
Phototransistor
100
50
Diode
0
0
18484
25
50
75
100
125
150
T
amb
– Ambient Temperature ( C )
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
www.vishay.com
2
Document Number 83686
Rev. 1.5, 20-Apr-04
VISHAY [ VISHAY TELEFUNKEN ]
