New Product
S1A thru S1M
Vishay General Semiconductor
100
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Instantaneous Forward Current (A)
10
Junction Capacitance (pF)
T
J
= 25 °C
1
10
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.8
1.2
1.6
2.0
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V
)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10
1000
1
T
J
= 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Leakage
Current (µA)
100
S1K, S1M
0.1
T
J
= 75 °C
S1A thru S1J
10
Units Mounted on
0.20" x 0.20" (5.0 mm x 5.0 mm)
x 0.5 Mil. Inches (0.013 mm)
Thick Copper Land Areas
1
0.01
0.1
1
10
100
0.01
T
J
= 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 89272
Revision: 19-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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