MUR440 & MUR460
Vishay General Semiconductor
100
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
T
J
= 175 °C
1
Junction Capacitance (pF)
1.6
2.0
100
T
J
= 100 °C
0.1
T
J
= 25 °C
0.01
0
0.4
0.8
1.2
10
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance per Leg
1000
Instantaneous Reverse Leakage
Current (µA)
100
T
J
= 175 °C
10
T
J
= 100 °C
1
0.1
T
J
= 25 °C
0.01
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Document Number: 88686
Revision: 20-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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