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MOC8104 参数 Datasheet PDF下载

MOC8104图片预览
型号: MOC8104
PDF下载: 下载PDF文件 查看货源
内容描述: 光电耦合器,光电晶体管输出,无连接基地 [Optocoupler, Phototransistor Output, No Base Connection]
分类和应用: 晶体光电晶体管光电晶体管输出元件
文件页数/大小: 7 页 / 129 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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MOC8101/MOC8102/MOC8103/MOC8104/MOC8105
Vishay Semiconductors
Optocoupler, Phototransistor Output,
No Base Connection
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
INPUT
Reverse voltage
Forward continuous current
Surge forward current
Power dissipation
Derate linearly from 25°C
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector current
Derate linearly from 25°C
Power dissipation
COUPLER
Isolation test voltage
Creepage distance
Clearance distance
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Derate linearly from 25 °C
Total power dissipation
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
(2)
TEST CONDITION
SYMBOL
V
R
I
F
VALUE
6.0
60
2.5
100
1.33
UNIT
V
mA
A
mW
mW/°C
V
V
mA
mW/°C
mW
V
RMS
mm
mm
mm
t
10 µs
I
FSM
P
diss
BV
CEO
BV
ECO
I
C
P
diss
V
ISO
30
7.0
50
2.0
150
5300
7.0
7.0
0.4
CTI
V
IO
= 500 V
R
IO
P
tot
T
stg
T
amb
T
j
max. 10 s, dip soldering:
distance to seating plane
1.5 mm
T
sld
175
10
12
3.33
250
- 55 to + 150
- 55 to + 100
100
260
Ω
mW/°C
mW
°C
°C
°C
°C
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector emitter dark current
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Thermal resistance
www.vishay.com
2
V
CE
= 5.0 V, f = 1.0 MHz
V
CE
= 10 V, T
amp
= 25 °C
V
CE
= 10 V, T
amp
= 100 °C
I
C
= 1.0 mA
I
E
= 100
μA
MOC8101
MOC8102
C
CE
I
CEO1
I
CEO1
BV
CEO
BV
ECO
R
thja
For technical questions, contact: optocoupler.answers@vishay.com
30
7.0
500
5.2
1.0
1.0
50
pF
nA
µA
V
V
K/W
Document Number: 83660
Rev. 1.5, 11-Jan-08
I
F
= 10 mA
I
R
= 10 µA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
V
F
V
BR
I
R
C
O
R
thja
6.0
0.01
25
750
10
1.25
1.5
V
V
µA
pF
K/W
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT