MMBT2222A
Small Signal Transistor (NPN)
Electrical Characteristics
(T
Parameter
J
= 25°C unless otherwise noted)
Symbol
Test Condition
V
CE =
10 V, I
C
= 0.1 mA
V
CE =
10 V, I
C
= 1 mA
V
CE =
10 V, I
C
= 10 mA
V
CE =
10 V, I
C
= 10 mA
T
A
= -55°C
V
CE =
10 V, I
C
= 150 mA
(1)
V
CE =
10 V, I
C
= 500 mA
(1)
V
CE =
1.0 V, I
C
= 150 mA
(1)
I
C
= 10
µA,
I
E
= 0
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
C
= 0
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
EB
= 3 V, V
CE
= 60 V
V
CB
= 60 V, I
E
= 0
V
CB
= 50 V, I
E
= 0 V
T
A
= 125°C
V
EB
= 3 V, V
CE
= 60 V
V
EB
= 3 V
DC
, I
C
= 0
V
CE
= 20 V, I
C
= 20 mA
f = 100 MHz
V
CB
= 10 V, f = 1 MHz, I
E
= 0
V
EB
= 0.5 V, f = 1 MHz, I
C
= 0
V
CE
= 10 V, I
C
= 100
µA,
R
S
= 1 kΩ, f = 1 kHz
V
CE
= 10 V, I
C
= 1 mA
f = 1 kHz
V
CE
= 10 V, I
C
= 10 mA
f = 1 kHz
V
CE
= 10 V, I
C
= 1 mA,
f = 1 kHz
V
CE
= 10 V, I
C
= 10 mA,
f = 1 kHz
V
CE
= 10 V, I
C
= 1 mA,
f = 1 kHz
V
CE
= 10 V, I
C
= 1 mA,
f = 1 kHz
V
CE
= 10 V, I
C
= 10 mA,
f = 1 kHz
Min
35
50
75
35
100
40
50
75
40
6.0
—
—
0.6
—
—
—
—
—
—
300
—
—
—
2
0.25
50
75
50
75
5.0
25
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
—
300
—
—
—
—
—
0.3
1.0
1.2
2.0
10
10
10
20
100
—
8
25
4.0
8.0
Unit
DC Current Gain
h
FE
—
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(1)
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
(1)
Collector Cut-off Current
Collector Cut-off Current
Base Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CEX
I
CBO
I
BL
I
EBO
f
T
C
obo
C
ibo
NF
V
V
V
V
V
nA
nA
µA
nA
nA
MHz
pF
pF
dB
Input Impedance
h
ie
kΩ
1.25
300
375
300
375
35
200
µS
—
Small Signal Current Gain
h
fe
Voltage Feedback Ratio
h
re
—
Output Admittance
h
oe
Note:
(1) Pulse Test: Pulse width
≤
300
µs
- Duty cycle
≤
2%
VISHAY [ VISHAY TELEFUNKEN ]
